PART |
Description |
Maker |
IDW16G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDH08G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDY10S120 |
2nd Generation thinQ! SiC Schottky Diode
|
Infineon Technologies AG
|
IDH12SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDT04S60C |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies AG
|
IDB10S60C |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies AG Infineon Technologies A...
|
IDT10S60C08 |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies AG
|
IDH05SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDT10S60C IDT10BS60C |
2nd Generation thinQ SiC Schottky Diode 2nd Generation thinQ! SiC Schottky Diode
|
Integrated Device Technology Infineon Technologies AG
|
IDD08SG60C IDD08SG60C-13 |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies A...
|